Experimental Study on Silicon Nanocrystals Rich Lanthanum Fluoride Films for Future Electronic Devices

  • Md. Ferdous Rahman Department of Electronics and Telecommunication Engineering, Begum Rokeya University, Rangpur
  • Sheikh Rashel Al Ahmed Department of Electronics and Telecommunication Engineering, Pabna Science & Technology University, Pabna
  • Golam Saklayen Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi 6205
  • Abu Bakar Md. Ismail Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi 6205
Keywords: Hybrid-solar-cell, Macroporous, Exciton, Bulk-heterojunction, Electrochemical-etching, Fill-factor, Conversion-efficiency

Abstract

Feasibility for the future electronic devices a thorough investigation on Silicon nanocrystals (Si-NCs) rich Lanthanum Fluoride (LaF3) film fabricated using a novel onestep chemical method has been reported here. Colloidal solution of Si-NCs in hydrofluoric acid (HF) was prepared from meso-porous silicon by ultrasonic vibration (sonication). On a silicon (Si) substrate LaCl3 solution in HCL is allowed to react with the colloidal solution of prepared Si-NCs. LaCl3 reacts with HF of Si-NCs solution and produces LaF3 crystals that deposits on the silicon substrate as a film embedding Si-NCs. This is a novel single step chemical way of depositing LaF3 insulating layer embedding Si-NCs (LaF3:Si-NCs). The XRD and EDX analysis of the deposited film show a polycrystalline and non-stoichiometric nature of LaF3. The presence of Si-NCs was confirmed by SEM. Application of this material has been tested for low-voltage operating non-volatile memory (NVM) and Schottky junction solar cells. The Al/LaF3:Si-NCs/Al structure as NVM offered a memory window of 525 mV at a programming and erasing bias of 2V. LaF3:Si-NCs films showed strong light absorption. Current-Voltage (I-V) characteristics of the Schottky device in ITO/LaF3:Si-NCs/Al structure showed a dependency on the incident light intensity where current was varied in the range of 5 mA to 40 mA and under various light illumination i.e., 400 lux to 1200 lux. Experimental results show a lot of promise of Si-NCs-rich LaF3 film to be used as an insulating film in non-volatile memory as well as a photoactive material in Schottkey junction solar cell.

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Abstract
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PDF
765
Published
2016-11-19
How to Cite
Rahman, M. F., Ahmed, S. R. A., Saklayen, G., & Ismail, A. B. M. (2016). Experimental Study on Silicon Nanocrystals Rich Lanthanum Fluoride Films for Future Electronic Devices. Rajshahi University Journal of Science and Engineering, 44, 61-66. https://doi.org/10.3329/rujse.v44i0.30388