Investigation of Site Dependent Donor-Acceptor (Al-N) Doping Effect into ZnO for Optoelectronic Applications. Journal of Scientific Research, [S. l.], v. 16, n. 1, p. 171–186, 2024. DOI: 10.3329/jsr.v16i1.66310. Disponível em: https://www.banglajol.info/index.php/JSR/article/view/66310. Acesso em: 27 jun. 2026.