Si Interlayer Thickness Dependence of Hysteresis Loop in Co/Si/Co/GaAs(001)

  • J. Islam Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi 6205
  • Y. Yamamoto School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292
  • E. Shikoh School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292
  • A. Fujiwara School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292
  • H. Hori School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292
Keywords: Magnetic hysteresis, Interlayer, Co/Si/Co trilayer, Spins reversal, Two-phase hysteresis loop, Buffer layer.

Abstract

Magnetic hysteresis loop changes from two-phase to single-phase with decreasing Si interlayer thickness in Co/Si/Co/GaAs. Coercive field of 50 nm Co deposited on Si layer decreases with the increase of Si interlayer thickness. Deposition of Au layer between Co and Si changes the magnetic hysteresis loop. We propose that the formation of cobalt silicides at the interface of Co and Si modulate magnetic properties of the trilayer without Au buffer layer.

© 2012 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.

doi: http://dx.doi.org/10.3329/jsr.v4i3.10852 J. Sci. Res. 4 (3), 561-567 (2012)

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Author Biography

J. Islam, Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi 6205

 

 

Published
2012-08-28
How to Cite
Islam, J., Yamamoto, Y., Shikoh, E., Fujiwara, A., & Hori, H. (2012). Si Interlayer Thickness Dependence of Hysteresis Loop in Co/Si/Co/GaAs(001). Journal of Scientific Research, 4(3), 561-567. https://doi.org/10.3329/jsr.v4i3.10852
Section
Section A: Physical and Mathematical Sciences