Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation: A Mini Review of Two-Wavelength Excited Photoluminescence

Authors

  • Norihiko Kamata Saitama University
  • Abu Zafor Md. Touhidul Islam University of Rajshahi

DOI:

https://doi.org/10.3329/rujse.v43i0.26158

Abstract

We have developed an optical method of detecting and characterizing nonradiative recombination (NRR) centers without electrical contact. The method combines a below-gap excitation (BGE) light with a conventional above-gap excitation light in photoluminescence (PL) measurement, and discriminates the PL intensity change due to switching on and off the BGE. A quantitative analysis of the detected NRR centers became possible by utilizing the saturating tendency of the PL intensity change with increasing the BGE density due to trap filling effect. Some experimental results of AlGaAs, InGaN, and AlGaN quantum wells were shown to allocate the development and present status as well as to exemplify their interpretations.

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Published

2015-12-31

How to Cite

Kamata, N., & Islam, A. Z. M. T. (2015). Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation: A Mini Review of Two-Wavelength Excited Photoluminescence. Rajshahi University Journal of Science and Engineering, 43, 1–9. https://doi.org/10.3329/rujse.v43i0.26158